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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7840BDP-T1-GE3
SI7840BDP-T1-GE3
MOSFETs SI7840BDP-T1-GE3
Vishay
SI7840BDP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7840BDP-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.04
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Typical Fall Time (ns)14
Typical Rise Time (ns)14
Number of Elements per Chip1
Maximum Power Dissipation (mW)1800
Typical Gate Charge @ Vgs (nC)14@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)39
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Maximum Drain Source Resistance (MOhm)8.5@10V
Description
Trans MOSFET N-CH 30V 11A 8-Pin PowerPAK SO T/R
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