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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI7900AEDN-T1-GE3
SI7900AEDN-T1-GE3
MOSFETs SI7900AEDN-T1-GE3
Vishay
SI7900AEDN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SI7900AEDN-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Common Quad Drain
Package Width3.05
Package Height1.07(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212
Standard Package NamePowerPAK 1212
Typical Fall Time (ns)4200
Typical Rise Time (ns)1300
Number of Elements per Chip2
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ Vgs (nC)10.5@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)850
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)8600
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6
Maximum Drain Source Resistance (mOhm)26@4.5V
Description
Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R
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