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SI7956DP-T1-E3
SI7956DP-T1-E3
MOSFETs SI7956DP-T1-E3
Vishay
SI7956DP-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Typical Fall Time (ns)50
Typical Rise Time (ns)36
Number of Elements per Chip2
Maximum Power Dissipation (mW)1400
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)17@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)18
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.6
Maximum Drain Source Resistance (mOhm)105@10V
Description
Trans MOSFET N-CH 150V 2.6A 8-Pin PowerPAK SO T/R
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