HTS | 8541.29.00.95 |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual Dual Drain |
Package Width | 5.89 |
Package Height | 1.07(Max) |
Package Length | 4.9 |
Product Category | Power MOSFET |
Supplier Package | PowerPAK SO |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 10@Channel 1|13@Channel 2 |
Typical Rise Time (ns) | 15@Channel 1|17@Channel 2 |
Number of Elements per Chip | 2 |
Maximum Gate Resistance (Ohm) | 7 |
Maximum Power Dissipation (mW) | 3600@Channel 1|4000@Channel 2 |
Typical Gate Charge @ 10V (nC) | 17@Channel 1|32@Channel 2 |
Typical Gate Charge @ Vgs (nC) | 17@10V|8.2@4.5V@Channel 1|32@10V|15.3@4.5V@Channel 2 |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 200@Channel 1|390@Channel 2 |
Typical Turn-On Delay Time (ns) | 20@Channel 1|26@Channel 2 |
Maximum Drain Source Voltage (V) | 30 |
Typical Gate Plateau Voltage (V) | 3@Channel 1|3.2@Channel 2 |
Typical Turn-Off Delay Time (ns) | 22@Channel 1|35@Channel 2 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.8 |
Typical Gate to Drain Charge (nC) | 2.7@Channel 1|4.7@Channel 2 |
Maximum Gate Threshold Voltage (V) | 2.5 |
Minimum Gate Threshold Voltage (V) | 1.2 |
Typical Gate to Source Charge (nC) | 3.2@Channel 1|6.3@Channel 2 |
Typical Reverse Recovery Time (ns) | 20@Channel 1|27@Channel 2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 15@Channel 1|21@Channel 2 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 1100@15V@Channel 1|2000@15V@Channel 2 |
Typical Reverse Recovery Charge (nC) | 15@Channel 1|22@Channel 2 |
Maximum Drain Source Resistance (mOhm) | 9.3@10V@Channel 1|5.3@10V@Channel 2 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 60@Channel 1|80@Channel 2 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 3600@Channel 1|4000@Channel 2 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 90@15V@Channel 1|160@15v@Channel 2 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 15@Channel 1|21@Channel 2 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 35@Channel 1|31@Channel 2 |
Description | |