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MOSFETs SI8425DB-T1-E1
Vishay
SI8425DB-T1-E1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Ball |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Dual Drain |
| Package Width | 1.6(Max) |
| Package Height | 0.31(Max) |
| Package Length | 1.6(Max) |
| Product Category | Power MOSFET |
| Supplier Package | Micro Foot |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | BGA |
| Typical Fall Time (ns) | 100 |
| Typical Rise Time (ns) | 25|10 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2700 |
| Typical Gate Charge @ 10V (nC) | 73 |
| Typical Gate Charge @ Vgs (nC) | 73@10V|36@4.5V |
| Maximum Gate Source Voltage (V) | ±10 |
| Typical Turn-On Delay Time (ns) | 25|7 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 300|430 |
| Maximum Gate Threshold Voltage (V) | 0.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 9.3 |
| Typical Input Capacitance @ Vds (pF) | 2800@10V |
| Maximum Drain Source Resistance (MOhm) | 23@4.5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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