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MOSFETs SI8429DB-T1-E1
Vishay
SI8429DB-T1-E1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.10.00.80 |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Ball |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Dual Drain |
| Package Width | 1.6(Max) |
| Package Height | 0.36(Max) |
| Package Length | 1.6(Max) |
| Product Category | Power MOSFET |
| Supplier Package | Micro Foot |
| Process Technology | TrenchFET |
| Standard Package Name | BGA |
| Typical Fall Time (ns) | 155 |
| Typical Rise Time (ns) | 25 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 6250 |
| Typical Gate Charge @ Vgs (nC) | 24@5V|21@4.5V |
| Maximum Gate Source Voltage (V) | ±5 |
| Typical Output Capacitance (pF) | 590 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 8 |
| Typical Turn-Off Delay Time (ns) | 260 |
| Typical Gate to Drain Charge (nC) | 3.7 |
| Maximum Gate Threshold Voltage (V) | 0.8 |
| Typical Gate to Source Charge (nC) | 1.8 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 11.7 |
| Typical Input Capacitance @ Vds (pF) | 1640@4V |
| Typical Reverse Recovery Charge (nC) | 150 |
| Maximum Drain Source Resistance (mOhm) | 35@4.5V |
| Description |
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