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SI8808DB-T2-E1
SI8808DB-T2-E1
MOSFETs SI8808DB-T2-E1
Vishay
SI8808DB-T2-E1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeBall
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Source
Package Width0.76
Package Height0.21
Package Length0.76
Product CategoryPower MOSFET
Supplier PackageMicro Foot
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameBGA
Typical Fall Time (ns)10
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)900
Typical Gate Charge @ Vgs (nC)6.5@8V|3.7@4.5V
Maximum Gate Source Voltage (V)±8
Typical Output Capacitance (pF)40
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)1.2
Typical Turn-Off Delay Time (ns)22
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.7
Typical Gate to Drain Charge (nC)0.52
Maximum Gate Threshold Voltage (V)0.9
Minimum Gate Threshold Voltage (V)0.4
Typical Gate to Source Charge (nC)0.53
Typical Reverse Recovery Time (ns)11
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)330@15V
Typical Reverse Recovery Charge (nC)5
Maximum Drain Source Resistance (MOhm)95@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)8
Maximum Pulsed Drain Current @ TC=25°C (A)10
Maximum Power Dissipation on PCB @ TC=25°C (W)0.9
Typical Reverse Transfer Capacitance @ Vds (pF)16@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)2.5
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)330
Description
Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R
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