HTS | 8541.21.00.95 |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 4 |
Automotive | No |
Lead Shape | Ball |
PCB changed | 4 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Dual Source |
Package Width | 0.76 |
Package Height | 0.21 |
Package Length | 0.76 |
Product Category | Power MOSFET |
Supplier Package | Micro Foot |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET |
Standard Package Name | BGA |
Typical Fall Time (ns) | 10 |
Typical Rise Time (ns) | 15 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 900 |
Typical Gate Charge @ Vgs (nC) | 6.5@8V|3.7@4.5V |
Maximum Gate Source Voltage (V) | ±8 |
Typical Output Capacitance (pF) | 40 |
Typical Turn-On Delay Time (ns) | 7 |
Maximum Drain Source Voltage (V) | 30 |
Typical Gate Plateau Voltage (V) | 1.2 |
Typical Turn-Off Delay Time (ns) | 22 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.7 |
Typical Gate to Drain Charge (nC) | 0.52 |
Maximum Gate Threshold Voltage (V) | 0.9 |
Minimum Gate Threshold Voltage (V) | 0.4 |
Typical Gate to Source Charge (nC) | 0.53 |
Typical Reverse Recovery Time (ns) | 11 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 2.5 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 330@15V |
Typical Reverse Recovery Charge (nC) | 5 |
Maximum Drain Source Resistance (MOhm) | 95@4.5V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 8 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 10 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.9 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 16@15V |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 2.5 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 330 |
Description | |