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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI8810EDB-T2-E1
SI8810EDB-T2-E1
MOSFETs SI8810EDB-T2-E1
Vishay
SI8810EDB-T2-E1
--
Diodes, Transistors and Thyristors
MOSFETs
SI8810EDB-T2-E1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeBall
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Source
Package Width0.8
Package Height0.2
Package Length0.8
Product CategoryPower MOSFET
Supplier PackageMicro Foot
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameBGA
Typical Fall Time (ns)7
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)900
Typical Gate Charge @ Vgs (nC)5.2@8V|3@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)25
Maximum Gate Threshold Voltage (V)0.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.9
Typical Input Capacitance @ Vds (pF)245@10V
Maximum Drain Source Resistance (MOhm)72@4.5V
Maximum Gate Source Leakage Current (nA)5000
Description
Trans MOSFET N-CH 20V 2.9A 4-Pin Micro Foot T/R
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