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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI8823EDB-T2-E1
SI8823EDB-T2-E1
MOSFETs SI8823EDB-T2-E1
Vishay
SI8823EDB-T2-E1
--
Diodes, Transistors and Thyristors
MOSFETs
SI8823EDB-T2-E1.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width0.8
Package Length0.8
Product CategoryPower MOSFET
Supplier PackageMicro Foot
Typical Fall Time (ns)35|40
Typical Rise Time (ns)30|20
Number of Elements per Chip1
Maximum Power Dissipation (mW)900
Typical Gate Charge @ Vgs (nC)6.6@4.5V|11@8V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)7|16
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)75|60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.7
Typical Input Capacitance @ Vds (pF)580@10V
Maximum Drain Source Resistance (MOhm)95@4.5V
Description
Trans MOSFET P-CH 20V 2.7A 4-Pin Micro Foot
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