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SI8902AEDB-T2-E1
SI8902AEDB-T2-E1
MOSFETs SI8902AEDB-T2-E1
Vishay
SI8902AEDB-T2-E1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.56
Package Height0.3
Package Length2.36
Product CategoryPower MOSFET
Supplier PackageMicro Foot
Process TechnologyTrenchFET
Typical Fall Time (ns)12000
Typical Rise Time (ns)1300|3500
Number of Elements per Chip2
Maximum Power Dissipation (mW)1700
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)700|1500
Maximum Drain Source Voltage (V)24
Typical Turn-Off Delay Time (ns)35000|25000
Maximum Gate Threshold Voltage (V)0.9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Gate Source Leakage Current (nA)10000000
Description
Trans MOSFET N-CH 24V 6-Pin Micro Foot T/R
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