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SI9801DY
SI9801DY
MOSFETs SI9801DY
Vishay
SI9801DY
--
Diodes, Transistors and Thyristors
MOSFETs
SI9801DY.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Common Quad Drain
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)1
Standard Package NameSOP
Typical Fall Time (ns)8@N Channel|11@P Channel
Typical Rise Time (ns)22@N Channel|52@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)5.2@4.5V@N Channel|7.9@4.5V@P Channel
Maximum Gate Source Voltage (V)±14
Typical Output Capacitance (pF)299
Typical Turn-On Delay Time (ns)12@N Channel|20@P Channel
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.6
Typical Turn-Off Delay Time (ns)27@N Channel|37@P Channel
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.73@N Channel|0.75@P Channel
Typical Gate to Drain Charge (nC)1.15@N Channel|1.9@P Channel
Maximum Gate Threshold Voltage (V)0.6(Min)
Minimum Gate Threshold Voltage (V)0.6
Typical Gate to Source Charge (nC)0.95@N Channel|1.6@P Channel
Typical Reverse Recovery Time (ns)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.5@N Channel|4@P Channel
Operating Junction Temperature (°C)-55 to 150
Maximum Drain Source Resistance (MOhm)55@4.5V@N Channel|80@4.5V@P Channel
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)14
Maximum Pulsed Drain Current @ TC=25°C (A)20
Maximum Power Dissipation on PCB @ TC=25°C (W)2
Maximum Continuous Drain Current on PCB @ TC=25°C (A)4.5@N Channel|4@P Channel
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)62.5
Description
Trans MOSFET N/P-CH 20V 4.5A/4A 8-Pin SOIC N
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