PPAP | No |
EU RoHS | Not Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N|P |
Configuration | Dual Common Quad Drain |
Package Width | 4(Max) |
Package Height | 1.55(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC N |
Maximum IDSS (uA) | 1 |
Standard Package Name | SOP |
Typical Fall Time (ns) | 8@N Channel|11@P Channel |
Typical Rise Time (ns) | 22@N Channel|52@P Channel |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2000 |
Typical Gate Charge @ Vgs (nC) | 5.2@4.5V@N Channel|7.9@4.5V@P Channel |
Maximum Gate Source Voltage (V) | ±14 |
Typical Output Capacitance (pF) | 299 |
Typical Turn-On Delay Time (ns) | 12@N Channel|20@P Channel |
Maximum Drain Source Voltage (V) | 20 |
Typical Gate Plateau Voltage (V) | 1.6 |
Typical Turn-Off Delay Time (ns) | 27@N Channel|37@P Channel |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.73@N Channel|0.75@P Channel |
Typical Gate to Drain Charge (nC) | 1.15@N Channel|1.9@P Channel |
Maximum Gate Threshold Voltage (V) | 0.6(Min) |
Minimum Gate Threshold Voltage (V) | 0.6 |
Typical Gate to Source Charge (nC) | 0.95@N Channel|1.6@P Channel |
Typical Reverse Recovery Time (ns) | 60 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4.5@N Channel|4@P Channel |
Operating Junction Temperature (°C) | -55 to 150 |
Maximum Drain Source Resistance (MOhm) | 55@4.5V@N Channel|80@4.5V@P Channel |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 14 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 4.5@N Channel|4@P Channel |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62.5 |
Description | |