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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIA4263DJ-T1-GE3
SIA4263DJ-T1-GE3
MOSFETs SIA4263DJ-T1-GE3
Vishay
SIA4263DJ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIA4263DJ-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width2.05
Package Height0.75(Max)
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70 EP
Process TechnologyTrenchFET Gen III
Typical Fall Time (ns)40
Typical Rise Time (ns)20|30
Number of Elements per Chip1
Maximum Power Dissipation (mW)3290
Typical Gate Charge @ Vgs (nC)34.8@8V|19.8@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)25|8
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)95|115
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1825@10V
Maximum Drain Source Resistance (mOhm)22@4.5V
Description
Trans MOSFET P-CH 20V 7.5A 6-Pin PowerPAK SC-70 EP T/R
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