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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIA431DJ-T1-GE3
SIA431DJ-T1-GE3
MOSFETs SIA431DJ-T1-GE3
Vishay
SIA431DJ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIA431DJ-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width2.05
Package Height0.75
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70
Process TechnologyTrenchFET
Typical Fall Time (ns)25
Typical Rise Time (ns)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ Vgs (nC)40@8V|24@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)22
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)65
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)1700@10V
Maximum Drain Source Resistance (mOhm)25@4.5V
Description
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R
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