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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIA433EDJ-T1-GE3
SIA433EDJ-T1-GE3
MOSFETs SIA433EDJ-T1-GE3
Vishay
SIA433EDJ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIA433EDJ-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width2.05
Package Height0.75
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)3200|3500
Typical Rise Time (ns)1700|600
Number of Elements per Chip1
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ Vgs (nC)20@4.5V|50@8V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)300|710
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)10000|6000
Maximum Gate Threshold Voltage (V)1.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Maximum Drain Source Resistance (mOhm)18@4.5V
Maximum Gate Source Leakage Current (nA)20000
Description
Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 T/R
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