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SIA469DJ-T1-GE3
SIA469DJ-T1-GE3
MOSFETs SIA469DJ-T1-GE3
Vishay
SIA469DJ-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Dual Source
Package Width2.05
Package Height0.75(Max)
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70 EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET Gen III
Typical Fall Time (ns)14|15
Typical Rise Time (ns)26|17
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)18
Minimum Gate Resistance (Ohm)1.8
Maximum Power Dissipation (mW)3300
Typical Gate Charge @ 10V (nC)21
Typical Gate Charge @ Vgs (nC)21@10V|10@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)130
Typical Turn-On Delay Time (ns)7|30
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.3
Typical Turn-Off Delay Time (ns)25|30
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.85
Typical Gate to Drain Charge (nC)3.6
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)2.3
Typical Reverse Recovery Time (ns)18
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.8
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1020@15V
Typical Reverse Recovery Charge (nC)10
Maximum Drain Source Resistance (mOhm)26.5@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)40
Maximum Power Dissipation on PCB @ TC=25°C (W)3.3
Typical Reverse Transfer Capacitance @ Vds (pF)115@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)8.8
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)80
Description
Trans MOSFET P-CH 30V 8.8A 6-Pin PowerPAK SC-70 EP T/R
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