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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIA511DJ-T1-GE3
SIA511DJ-T1-GE3
MOSFETs SIA511DJ-T1-GE3
Vishay
SIA511DJ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIA511DJ-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width2.05
Package Height0.75
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70
Process TechnologyTrenchFET
Typical Fall Time (ns)10@P Channel|15@N Channel
Typical Rise Time (ns)15@N Channel|25@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1900
Typical Gate Charge @ Vgs (nC)7.5@8V|8@8V|5@4.5V@P Channel|4.5@4.5V@N Channel
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)5@N Channel|15@P Channel
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)20@P Channel|35@N Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.5@N Channel|4.3@P Channel
Typical Input Capacitance @ Vds (pF)400@6V
Maximum Drain Source Resistance (MOhm)70@4.5V@P Channel|40@4.5V@N Channel
Description
Trans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R
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