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MOSFETs SIA938DJT-T1-GE3
Vishay
SIA938DJT-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 25 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1900 |
| Typical Gate Charge @ Vgs (nC) | 7.6@10V|3.5@4.5V |
| Maximum Gate Source Voltage (V) | -8|12 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.5 |
| Typical Input Capacitance @ Vds (pF) | 425@10V |
| Maximum Drain Source Resistance (mOhm) | 21.5@10V |
| Description |
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