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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIB422EDK-T1-GE3
SIB422EDK-T1-GE3
MOSFETs SIB422EDK-T1-GE3
Vishay
SIB422EDK-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIB422EDK-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width2.05
Package Height0.75
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70
Process TechnologyTrenchFET
Typical Fall Time (ns)1700|1600
Typical Rise Time (ns)600|300
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)11.5@8V|6@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)300|150
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)3800|5600
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Maximum Drain Source Resistance (MOhm)30@4.5V
Description
Trans MOSFET N-CH 20V 9A 6-Pin PowerPAK SC-70 T/R
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