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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIB433EDK-T1-GE3
SIB433EDK-T1-GE3
MOSFETs SIB433EDK-T1-GE3
Vishay
SIB433EDK-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIB433EDK-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.6
Package Height0.75
Package Length1.6
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-75
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)2000|2300
Typical Rise Time (ns)1000|400
Number of Elements per Chip1
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ Vgs (nC)14@8V|7.6@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)200|90
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)4000|5200
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Maximum Drain Source Resistance (MOhm)58@4.5V
Maximum Gate Source Leakage Current (nA)6000
Description
Trans MOSFET P-CH 20V 9A 6-Pin PowerPAK SC-75 T/R
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