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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIB437EDKT-T1-GE3
SIB437EDKT-T1-GE3
MOSFETs SIB437EDKT-T1-GE3
Vishay
SIB437EDKT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIB437EDKT-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.6
Package Height0.75
Package Length1.6
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-75
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)630
Typical Rise Time (ns)170
Number of Elements per Chip1
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ Vgs (nC)10.5@4.5V
Maximum Gate Source Voltage (V)±5
Typical Turn-On Delay Time (ns)90
Maximum Drain Source Voltage (V)8
Typical Turn-Off Delay Time (ns)690
Maximum Gate Threshold Voltage (V)0.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Maximum Drain Source Resistance (MOhm)34@4.5V
Maximum Gate Source Leakage Current (nA)5000
Description
Trans MOSFET P-CH 8V 9A 6-Pin PowerPAK SC-75 T/R
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