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SIB456DK-T1-GE3
SIB456DK-T1-GE3
MOSFETs SIB456DK-T1-GE3
Vishay
SIB456DK-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width1.6
Package Height0.75(Max)
Package Length1.6
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-75
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)13
Typical Rise Time (ns)45
Number of Elements per Chip1
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ 10V (nC)3.3
Typical Gate Charge @ Vgs (nC)1.8@4.5V|3.3@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)11
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.3
Typical Input Capacitance @ Vds (pF)130@50V
Maximum Drain Source Resistance (mOhm)185@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 6.3A 6-Pin PowerPAK SC-75 T/R
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