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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIDR500EP-T1-RE3
SIDR500EP-T1-RE3
MOSFETs SIDR500EP-T1-RE3
Vishay
SIDR500EP-T1-RE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIDR500EP-T1-RE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyTrenchFET Gen V
Typical Fall Time (ns)20
Typical Rise Time (ns)102
Number of Elements per Chip1
Maximum Power Dissipation (mW)7500
Typical Gate Charge @ 10V (nC)120
Typical Gate Charge @ Vgs (nC)120@10V|54.3@4.5V
Maximum Gate Source Voltage (V)16
Typical Turn-On Delay Time (ns)47
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)50
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)94
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)8960@15V
Maximum Drain Source Resistance (mOhm)0.47@10V
Description
Trans MOSFET N-CH 30V 94A T/R
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