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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIDR510EP-T1-RE3
SIDR510EP-T1-RE3
MOSFETs SIDR510EP-T1-RE3
Vishay
SIDR510EP-T1-RE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIDR510EP-T1-RE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyTrenchFET Gen V
Typical Fall Time (ns)8|10
Typical Rise Time (ns)10|14
Number of Elements per Chip1
Maximum Power Dissipation (mW)7500
Typical Gate Charge @ 10V (nC)54
Typical Gate Charge @ Vgs (nC)54@10V|40@7.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)24|19
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)29|25
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)33
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)4980@50V
Maximum Drain Source Resistance (MOhm)3.6@10V
Description
Trans MOSFET N-CH 100V 33A T/R
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