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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIDR5802EP-T1-RE3
SIDR5802EP-T1-RE3
MOSFETs SIDR5802EP-T1-RE3
Vishay
SIDR5802EP-T1-RE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIDR5802EP-T1-RE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyTrenchFET Gen V
Typical Fall Time (ns)12|13
Typical Rise Time (ns)16|11
Number of Elements per Chip1
Maximum Power Dissipation (mW)7500
Typical Gate Charge @ 10V (nC)37.3
Typical Gate Charge @ Vgs (nC)28@7.5V|37.3@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16|21
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)25|26
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)34.2
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)3020@40V
Maximum Drain Source Resistance (mOhm)2.9@10V
Description
Trans MOSFET N-CH 80V 34.2A T/R
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