Product Attribute | Attribute Value |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Product Category | Power MOSFET |
Process Technology | TrenchFET Gen IV |
Typical Fall Time (ns) | 7|10 |
Typical Rise Time (ns) | 25|10 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 7500 |
Typical Gate Charge @ 10V (nC) | 68 |
Typical Gate Charge @ Vgs (nC) | 51@7.5V|68@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 20|24 |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 30|35 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 50.8 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 5130@30V |
Maximum Drain Source Resistance (mOhm) | 1.74@10V |
Description |