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SIE818DF-T1-E3
SIE818DF-T1-E3
MOSFETs SIE818DF-T1-E3
Vishay
SIE818DF-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count10
AutomotiveNo
PCB changed10
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.16
Package Height0.8
Package Length6.15
Product CategoryPower MOSFET
Supplier PackagePolarPAK
Process TechnologyTrenchFET
Typical Fall Time (ns)15|10
Typical Rise Time (ns)150|15
Number of Elements per Chip1
Maximum Power Dissipation (mW)5200
Typical Gate Charge @ 10V (nC)63
Typical Gate Charge @ Vgs (nC)63@10V|33@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)30|15
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-50
Maximum Continuous Drain Current (A)60
Typical Input Capacitance @ Vds (pF)3200@38V
Maximum Drain Source Resistance (MOhm)9.5@10V
Description
Trans MOSFET N-CH Si 75V 60A 10-Pin PolarPAK T/R
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