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SIHA100N60E-GE3
SIHA100N60E-GE3
MOSFETs SIHA100N60E-GE3
Vishay
SIHA100N60E-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height15.3(Max)
Package Length10.3(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220FP
Typical Fall Time (ns)20
Typical Rise Time (ns)34
Number of Elements per Chip1
Maximum Power Dissipation (mW)35000
Typical Gate Charge @ 10V (nC)33
Typical Gate Charge @ Vgs (nC)33@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)21
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)33
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)1851@100V
Maximum Drain Source Resistance (mOhm)100@10V
Description
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP
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