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MOSFETs SIHB22N60E-GE3
Vishay
SIHB22N60E-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 9.65(Max) |
| Package Height | 4.83(Max) |
| Package Length | 10.41(Max) |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 35 |
| Typical Rise Time (ns) | 27 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 227000 |
| Typical Gate Charge @ 10V (nC) | 57 |
| Typical Gate Charge @ Vgs (nC) | 57@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 66 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 21 |
| Typical Input Capacitance @ Vds (pF) | 1920@100V |
| Maximum Drain Source Resistance (MOhm) | 180@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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