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SIHB22N60EF
SIHB22N60EF
MOSFETs SIHB22N60EF
Vishay
SIHB22N60EF
--
Diodes, Transistors and Thyristors
MOSFETs
SIHB22N60EF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)25
Typical Rise Time (ns)21
Number of Elements per Chip1
Maximum Power Dissipation (mW)179000
Typical Gate Charge @ 10V (nC)48
Typical Gate Charge @ Vgs (nC)48@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)58
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19
Typical Input Capacitance @ Vds (pF)1423@100V
Maximum Drain Source Resistance (MOhm)182@10V
Description
Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab) D2PAK T/R
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