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SIHB35N60E
SIHB35N60E
MOSFETs SIHB35N60E
Vishay
SIHB35N60E
--
Diodes, Transistors and Thyristors
MOSFETs
SIHB35N60E.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Typical Fall Time (ns)32
Typical Rise Time (ns)61
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ 10V (nC)88
Typical Gate Charge @ Vgs (nC)88@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)29
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)78
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)32
Typical Input Capacitance @ Vds (pF)2760@100V
Maximum Drain Source Resistance (mOhm)94@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH 600V 32A 3-Pin(2+Tab) D2PAK Tube
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