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SIHF820L-GE3
SIHF820L-GE3
MOSFETs SIHF820L-GE3
Vishay
SIHF820L-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIHF820L-GE3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Maximum IDSS (uA)25
Standard Package NameI2PAK
Typical Fall Time (ns)16
Typical Rise Time (ns)8.6
Number of Elements per Chip1
Maximum Power Dissipation (mW)50000
Typical Gate Charge @ 10V (nC)24(Max)
Typical Gate Charge @ Vgs (nC)24(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)33
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.5
Typical Input Capacitance @ Vds (pF)360@25V
Maximum Drain Source Resistance (mOhm)3000@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 500V 2.5A 3-Pin(3+Tab) TO-262 T/R
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