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SIHFR9014TR-GE3
SIHFR9014TR-GE3
MOSFETs SIHFR9014TR-GE3
Vishay
SIHFR9014TR-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)100
Standard Package NameTO-252
Typical Fall Time (ns)31
Typical Rise Time (ns)63
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)12(Max)
Typical Gate Charge @ Vgs (nC)12(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)9.6
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.1
Typical Input Capacitance @ Vds (pF)270@25V
Maximum Drain Source Resistance (mOhm)500@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 60V 5.1A 3-Pin(2+Tab) DPAK T/R
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