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SIHFU9310-GE3
SIHFU9310-GE3
MOSFETs SIHFU9310-GE3
Vishay
SIHFU9310-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width2.39(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageTO-251AA
Maximum IDSS (uA)100
Standard Package NameTO-251
Typical Fall Time (ns)24
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)50000
Typical Gate Charge @ 10V (nC)13(Max)
Typical Gate Charge @ Vgs (nC)13(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)50
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)400
Typical Gate Plateau Voltage (V)5.1
Typical Turn-Off Delay Time (ns)25
Maximum Diode Forward Voltage (V)4
Typical Gate to Drain Charge (nC)5(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)3.2(Max)
Typical Reverse Recovery Time (ns)170
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.8
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)270@25V
Typical Reverse Recovery Charge (nC)640
Maximum Drain Source Resistance (mOhm)7000@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)7.2
Typical Reverse Transfer Capacitance @ Vds (pF)8@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET P-CH Si 400V 1.8A 3-Pin(3+Tab) TO-251AA
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