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SIHG11N80AE-GE3
SIHG11N80AE-GE3
MOSFETs SIHG11N80AE-GE3
Vishay
SIHG11N80AE-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.21(Max)
Package Height20.7(Max)
Package Length15.87(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247AC
Maximum IDSS (uA)1
Typical Fall Time (ns)27
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)78000
Typical Gate Charge @ 10V (nC)28
Typical Gate Charge @ Vgs (nC)28@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)25
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)804@100V
Maximum Drain Source Resistance (mOhm)450@10V
Maximum Gate Source Leakage Current (nA)50000
Description
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-247AC
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