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SIHG30N60E-E3
SIHG30N60E-E3
MOSFETs SIHG30N60E-E3
Vishay
SIHG30N60E-E3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height20.82(Max)
Package Length15.87(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247AC
Standard Package NameTO-247
Typical Fall Time (ns)36
Typical Rise Time (ns)32
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ 10V (nC)85
Typical Gate Charge @ Vgs (nC)85@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)63
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)29
Typical Input Capacitance @ Vds (pF)2600@100V
Maximum Drain Source Resistance (MOhm)125@10V
Description
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AC
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