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SIHG33N65E-GE3
SIHG33N65E-GE3
MOSFETs SIHG33N65E-GE3
Vishay
SIHG33N65E-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.31(Max)
Package Height20.82(Max)
Package Length15.87(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247AC
Maximum IDSS (uA)1
Standard Package NameTO-247
Typical Fall Time (ns)60
Typical Rise Time (ns)67
Number of Elements per Chip1
Maximum Power Dissipation (mW)313000
Typical Gate Charge @ 10V (nC)115
Typical Gate Charge @ Vgs (nC)115@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)103
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)32.4
Typical Input Capacitance @ Vds (pF)4040@100V
Maximum Drain Source Resistance (mOhm)105@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC
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