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SIHH068N60E-T1-GE3
SIHH068N60E-T1-GE3
MOSFETs SIHH068N60E-T1-GE3
Vishay
SIHH068N60E-T1-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed4
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Source
Package Width8
Package Height1(Max)
Package Length8
Product CategoryPower MOSFET
Supplier PackagePowerPAK EP
Maximum IDSS (uA)1
Typical Fall Time (ns)30
Typical Rise Time (ns)148
Number of Elements per Chip1
Maximum Power Dissipation (mW)202000
Typical Gate Charge @ 10V (nC)53
Typical Gate Charge @ Vgs (nC)53@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)56
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)60
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)34
Typical Input Capacitance @ Vds (pF)2650@100V
Maximum Drain Source Resistance (mOhm)68@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH 600V 34A 4-Pin PowerPAK EP T/R
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