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SIHLL110-GE3
SIHLL110-GE3
MOSFETs SIHLL110-GE3
Vishay
SIHLL110-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIHLL110-GE3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.7(Max)
Package Height1.8(Max) - 0.061
Package Length6.7(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-223
Maximum IDSS (uA)25
Standard Package NameSOT
Typical Fall Time (ns)18
Typical Rise Time (ns)47
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)6.1(Max)@5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)9.3
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)16
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.5
Typical Input Capacitance @ Vds (pF)250@25V
Maximum Drain Source Resistance (mOhm)540@5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223
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