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SIHLR014-GE3
SIHLR014-GE3
MOSFETs SIHLR014-GE3
Vishay
SIHLR014-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIHLR014-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)25
Typical Fall Time (ns)26
Typical Rise Time (ns)110
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)8.4(Max)@5V
Maximum Gate Source Voltage (V)±10
Typical Output Capacitance (pF)170
Typical Turn-On Delay Time (ns)9.3
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)17
Typical Gate to Drain Charge (nC)6(Max)
Maximum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)3.5(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.7
Typical Input Capacitance @ Vds (pF)400@25V
Typical Reverse Recovery Charge (nC)330
Maximum Drain Source Resistance (mOhm)200@5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 7.7A
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