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MOSFETs SIHLR110TR-GE3
Vishay
SIHLR110TR-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 25 |
| Typical Fall Time (ns) | 17 |
| Typical Rise Time (ns) | 47 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ Vgs (nC) | 6.1(Max)@5V |
| Maximum Gate Source Voltage (V) | ±10 |
| Typical Output Capacitance (pF) | 80 |
| Typical Turn-On Delay Time (ns) | 9.3 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Gate Plateau Voltage (V) | 4.1 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Maximum Diode Forward Voltage (V) | 2.5 |
| Typical Gate to Drain Charge (nC) | 3.3(Max) |
| Maximum Gate Threshold Voltage (V) | 2 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 2(Max) |
| Typical Reverse Recovery Time (ns) | 100 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.3 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 250@25V |
| Typical Reverse Recovery Charge (nC) | 500 |
| Maximum Drain Source Resistance (mOhm) | 540@5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 10 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 17 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 15@25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Description |
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