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SIHLU024-GE3
SIHLU024-GE3
MOSFETs SIHLU024-GE3
Vishay
SIHLU024-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIHLU024-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)25
Typical Fall Time (ns)41
Typical Rise Time (ns)110
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)18(Max)@5V
Maximum Gate Source Voltage (V)±10
Typical Output Capacitance (pF)360
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)23
Typical Gate to Drain Charge (nC)12(Max)
Maximum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)4.5(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)14
Typical Input Capacitance @ Vds (pF)870@25V
Typical Reverse Recovery Charge (nC)750
Maximum Drain Source Resistance (mOhm)100@5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 14A T/R
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