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SIHLZ34S-GE3
SIHLZ34S-GE3
MOSFETs SIHLZ34S-GE3
Vishay
SIHLZ34S-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIHLZ34S-GE3.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
Typical Fall Time (ns)56
Typical Rise Time (ns)170
Number of Elements per Chip1
Maximum Power Dissipation (mW)3700
Typical Gate Charge @ Vgs (nC)35(Max)@5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)30
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Typical Input Capacitance @ Vds (pF)1600@25V
Maximum Drain Source Resistance (mOhm)50@5V
Description
Trans MOSFET N-CH Si 60V 30A 3-Pin(2+Tab) D2PAK
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