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SIHP25N60EFL-GE3
SIHP25N60EFL-GE3
MOSFETs SIHP25N60EFL-GE3
Vishay
SIHP25N60EFL-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTO-220-3
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.65(Max)
Package Height9.01(Max)
Package Length10.51(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)1
Typical Fall Time (ns)21
Typical Rise Time (ns)39
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ 10V (nC)50
Typical Gate Charge @ Vgs (nC)50@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)47
Maximum Gate Threshold Voltage (V)5
Typical Gate Threshold Voltage (V)10
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)25
Typical Input Capacitance @ Vds (pF)2274@100V
Maximum Drain Source Resistance (mOhm)146@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Continuous Drain Current on PCB @ TC=25°C (A)25
Description
SIHP25N60EFL-GE3 Vishay MOSFETs Transistor N-CH 600V 25A 3-Pin(3+Tab) TO-220AB - Arrow.com
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