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SIHS90N65E-GE3
SIHS90N65E-GE3
MOSFETs SIHS90N65E-GE3
Vishay
SIHS90N65E-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Typical Fall Time (ns)267
Typical Rise Time (ns)152
Number of Elements per Chip1
Maximum Power Dissipation (mW)625000
Typical Gate Charge @ 10V (nC)394
Typical Gate Charge @ Vgs (nC)394@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)85
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)323
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)87
Typical Input Capacitance @ Vds (pF)11826@100V
Maximum Drain Source Resistance (mOhm)29@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH 650V 87A Tube
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