Product Attribute | Attribute Value |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tube |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1 |
Typical Fall Time (ns) | 267 |
Typical Rise Time (ns) | 152 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 625000 |
Typical Gate Charge @ 10V (nC) | 394 |
Typical Gate Charge @ Vgs (nC) | 394@10V |
Maximum Gate Source Voltage (V) | ±30 |
Typical Turn-On Delay Time (ns) | 85 |
Maximum Drain Source Voltage (V) | 650 |
Typical Turn-Off Delay Time (ns) | 323 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 87 |
Typical Input Capacitance @ Vds (pF) | 11826@100V |
Maximum Drain Source Resistance (mOhm) | 29@10V |
Maximum Gate Source Leakage Current (nA) | 1000 |
Description |