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SIHU4N80AE-GE3
SIHU4N80AE-GE3
MOSFETs SIHU4N80AE-GE3
Vishay
SIHU4N80AE-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.38(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Typical Fall Time (ns)25
Typical Rise Time (ns)7
Number of Elements per Chip1
Maximum Power Dissipation (mW)62500
Typical Gate Charge @ 10V (nC)11
Typical Gate Charge @ Vgs (nC)11@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)12
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.1
Typical Input Capacitance @ Vds (pF)11@100V
Maximum Drain Source Resistance (mOhm)1440@10V
Description
Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) IPAK
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