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SIJH800E
SIJH800E
MOSFETs SIJH800E
Vishay
SIJH800E
--
Diodes, Transistors and Thyristors
MOSFETs
SIJH800E.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyTrenchFET Gen IV
Typical Fall Time (ns)15
Typical Rise Time (ns)10|12
Number of Elements per Chip1
Maximum Power Dissipation (mW)3300
Typical Gate Charge @ 10V (nC)140
Typical Gate Charge @ Vgs (nC)140@10V|106@7.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)20|25
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)47|52
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)29
Typical Input Capacitance @ Vds (pF)10230@40V
Maximum Drain Source Resistance (mOhm)1.55@10V
Description
Trans MOSFET N-CH 80V 29A T/R
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