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SIR178DP-T1-RE3
SIR178DP-T1-RE3
MOSFETs SIR178DP-T1-RE3
Vishay
SIR178DP-T1-RE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Typical Fall Time (ns)14|39
Typical Rise Time (ns)10|64
Number of Elements per Chip1
Maximum Power Dissipation (mW)6300
Typical Gate Charge @ Vgs (nC)207@10V|95@4.5V
Maximum Gate Source Voltage (V)-8|12
Typical Turn-On Delay Time (ns)17|44
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)83|128
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)12430@10V
Maximum Drain Source Resistance (mOhm)0.4@10V
Description
Trans MOSFET N-CH 20V 100A 8-Pin PowerPAK SO EP T/R
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