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MOSFETs SIR182LDP-T1-RE3
Vishay
SIR182LDP-T1-RE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Process Technology | TrenchFET Gen IV |
| Typical Fall Time (ns) | 7|13 |
| Typical Rise Time (ns) | 6|61 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 5000 |
| Typical Gate Charge @ 10V (nC) | 56 |
| Typical Gate Charge @ Vgs (nC) | 56@10V|26@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 13|22 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 35|34 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 31.7 |
| Typical Input Capacitance @ Vds (pF) | 3700@30V |
| Maximum Drain Source Resistance (mOhm) | 2.75@10V |
| Description |
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