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SIR424DP-T1-GE3
SIR424DP-T1-GE3
MOSFETs SIR424DP-T1-GE3
Vishay
SIR424DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)10
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)4800
Typical Gate Charge @ 10V (nC)22
Typical Gate Charge @ Vgs (nC)22@10V|9.6@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)23
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Typical Input Capacitance @ Vds (pF)1250@10V
Maximum Drain Source Resistance (mOhm)5.5@10V
Description
Trans MOSFET N-CH 20V 30A 8-Pin PowerPAK SO T/R
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