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SIR440DP-T1-GE3
SIR440DP-T1-GE3
MOSFETs SIR440DP-T1-GE3
Vishay
SIR440DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSO
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)48
Typical Rise Time (ns)29
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)2
Minimum Gate Resistance (Ohm)0.2
Maximum Power Dissipation (mW)6250
Typical Gate Charge @ 10V (nC)100
Typical Gate Charge @ Vgs (nC)43.5@4.5V|100@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)1720
Typical Turn-On Delay Time (ns)45
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)2.8
Typical Turn-Off Delay Time (ns)81
Maximum Diode Forward Voltage (V)1.1
Typical Diode Forward Voltage (V)0.72
Typical Gate to Drain Charge (nC)12.5
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)13.5
Typical Reverse Recovery Time (ns)43
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)60
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)6000@10V
Typical Reverse Recovery Charge (nC)40
Maximum Drain Source Resistance (mOhm)1.55@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)100
Maximum Power Dissipation on PCB @ TC=25°C (W)6.25
Typical Reverse Transfer Capacitance @ Vds (pF)720@10V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)47
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)54
Description
Trans MOSFET N-CH 20V 60A 8-Pin PowerPAK SO EP T/R
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